STD2NA50中文资料意法半导体数据手册PDF规格书

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 3.25 Ω

■ ±30V GATE TO SOURCE VOLTAGE RATING

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100°C

■ LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1)

■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4)

APPLICATIONS

■ MEDIUM CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ CONSUMER AND INDUSTRIAL LIGHTING