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AOD412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOD412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT412

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT412

iscN-ChannelMOSFETTransistor

•DESCRITION •Besuitableforsynchronousrectificationforserverand generalpurposeapplications •FEATURES •DrainCurrent–ID=60A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=15.8mΩ(Max) •100avalanchetested •Minimu

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT412L

N-ChannelSDMOSTMPowerTransistor

GeneralDescription TheAOT412andAOT412LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurpos

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU412

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOU412

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOU412L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU412usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandlowgateresistance.ThisdeviceisideallysuitedforuseasahighsideswitchinCPUcorepowerconversion.StandardProductAOU412isPb-free(meetsROHS&Sony259specificatio

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOWF412

100VN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AQY412EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

AQY412EHAZ

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Corporation

松下松下电器

ASJ412

2.6mm&3.5mmAUDIOJACKSSTEREO&MONOEARPHONEJACKS

ADAM-TECHAdam Technologies, Inc.

亚当科技亚当科技股份有限公司

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

ASTMD412

TechsilConductiveElastomer

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

供应商型号品牌批号封装库存备注价格
QTC
DIP
36
本站现货库存
询价
STRONGFIRST/思硕
F11
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
STRONG
24+25+/26+27+
TO-39
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
GOODTAKE
21+
SMD
50000
全新原装正品现货,支持订货
询价
GOODTAKE
23+
SMD
50000
全新原装正品现货,支持订货
询价
GOODTAKE
2022
SMD
80000
原装现货,OEM渠道,欢迎咨询
询价
GOODTAKE
19+
SMD
1524
全新原装,支持实单,假一罚十,德创芯微
询价
GOODTAKE
23+
NA/
1524
优势代理渠道,原装正品,可全系列订货开增值税票
询价
N/A
24+
SOT89
5000
只做原装公司现货
询价
N/A
21+
SOT89
10000
原装现货假一罚十
询价
更多SSR412供应商 更新时间2024-6-9 16:00:00