Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

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PANASONIC

松下

PhotoMOS GE 1b (4脚型)

FEATURES\n1. High cost-performance type of\n   PhotoMOS 1 Form B output\n2. Low on-resistance\n   This has been realized thanks to the\n   built-in MOSFET processed by our\n   proprietary method, DSD (Double\n   diffused and Selective Doping) method.\n3. Reinforced insulation of 5,000 V\n   More tha 1. High cost-performance type of\n   PhotoMOS 1 Form B output\n2. Low on-resistance\n   This has been realized thanks to the\n   built-in MOSFET processed by our\n   proprietary method, DSD (Double\n   diffused and Selective Doping) method.\n3. Reinforced insulation of 5,000 V\n   More than 0.4 mm i;

Panasonic

松下

Package：4-SMD（0.300"，7.62mm）；包装：散装 类别：继电器 固态继电器 描述：SSR RELAY SPST-NC 550MA 0-60V

Panasonic Electric Works

Package：4-SMD（0.300"，7.62mm）；包装：散装 类别：继电器 固态继电器 描述：SSR RELAY SPST-NC 550MA 0-60V

Panasonic Electric Works