FEATURES

1. High cost-performance type of

PhotoMOS 1 Form B output

2. Low on-resistance

This has been realized thanks to the

built-in MOSFET processed by our

proprietary method, DSD (Double

diffused and Selective Doping) method.

3. Reinforced insulation of 5,000 V

More than 0.4 mm internal insulation

distance between inputs and outputs.

Conforms to EN41003, EN60950

(reinforced insulation).

4. Controls low-level analog signals

PhotoMOS feature extremely low closed

circuit offset voltage to enable control of

low-level analog signals without

distortion.

5. High sensitivity and low on resistance

Can control max. 0.55 A load current with

5 mA input current.

Low on-resistance of typ.1Ω

(AQY412EH).

6. Low-level off-state leakage current

TYPICAL APPLICATIONS

• Power supply

• Measuring equipment

• Security equipment

• Modem

• Telephone equipment

• Electricity, plant equipment

• Sensing equipment