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SST39SF040-70-4C-NH	文件：271.3 Kbytes Page：22 Pages	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash PRODUCTDESCRIPTION TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	SST Silicon Storage Technology，Inc.	SST
SST39SF040-70-4C-NH	文件：379.2 Kbytes Page：24 Pages	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash PRODUCTDESCRIPTION TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	SST Silicon Storage Technology，Inc.	SST
SST39SF040-70-4C-NHE	文件：379.2 Kbytes Page：24 Pages	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash PRODUCTDESCRIPTION TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	SST Silicon Storage Technology，Inc.	SST
SST39SF040-70-4C-NHE	文件：273.5 Kbytes Page：28 Pages	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash ProductDescription TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-NHE	文件：3.24998 Mbytes Page：29 Pages	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash Features •Organizedas128Kx8/256Kx8/512Kx8 •Single4.5-5.5VReadandWriteOperations •SuperiorReliability –Endurance:100,000Cycles(typical) –Greaterthan100yearsDataRetention •LowPowerConsumption (typicalvaluesat14MHz) –ActiveCurrent:10mA(typical) –Stand	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-NHE	文件：227.46 Kbytes Page：29 Pages	1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-NHE	文件：100 bytes Page：1 Pages	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带封装/外壳：32-LCC（J 形引线）类别：集成电路（IC）存储器描述：IC FLASH 4MBIT PARALLEL 32PLCC	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-NHE-T	文件：100 bytes Page：1 Pages	包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带封装/外壳：32-LCC（J 形引线）类别：集成电路（IC）存储器描述：IC FLASH 4MBIT PARALLEL 32PLCC	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-PH	文件：271.3 Kbytes Page：22 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash PRODUCTDESCRIPTION TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	SST Silicon Storage Technology，Inc.	SST
SST39SF040-70-4C-PH	文件：379.2 Kbytes Page：24 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash PRODUCTDESCRIPTION TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	SST Silicon Storage Technology，Inc.	SST
SST39SF040-70-4C-PHE	文件：379.2 Kbytes Page：24 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash PRODUCTDESCRIPTION TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	SST Silicon Storage Technology，Inc.	SST
SST39SF040-70-4C-PHE	文件：227.46 Kbytes Page：29 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-PHE	文件：273.5 Kbytes Page：28 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash ProductDescription TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-PHE	文件：3.24998 Mbytes Page：29 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash Features •Organizedas128Kx8/256Kx8/512Kx8 •Single4.5-5.5VReadandWriteOperations •SuperiorReliability –Endurance:100,000Cycles(typical) –Greaterthan100yearsDataRetention •LowPowerConsumption (typicalvaluesat14MHz) –ActiveCurrent:10mA(typical) –Stand	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-WH	文件：271.3 Kbytes Page：22 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash PRODUCTDESCRIPTION TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	SST Silicon Storage Technology，Inc.	SST
SST39SF040-70-4C-WH	文件：379.2 Kbytes Page：24 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash PRODUCTDESCRIPTION TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	SST Silicon Storage Technology，Inc.	SST
SST39SF040-70-4C-WHE	文件：379.2 Kbytes Page：24 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash PRODUCTDESCRIPTION TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	SST Silicon Storage Technology，Inc.	SST
SST39SF040-70-4C-WHE	文件：3.24998 Mbytes Page：29 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash Features •Organizedas128Kx8/256Kx8/512Kx8 •Single4.5-5.5VReadandWriteOperations •SuperiorReliability –Endurance:100,000Cycles(typical) –Greaterthan100yearsDataRetention •LowPowerConsumption (typicalvaluesat14MHz) –ActiveCurrent:10mA(typical) –Stand	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-WHE	文件：227.46 Kbytes Page：29 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
SST39SF040-70-4C-WHE	文件：273.5 Kbytes Page：28 Pages	1Mbit/2Mbit/4Mbit(x8)Multi-PurposeFlash ProductDescription TheSST39SF010A/020A/040areCMOSMulti-PurposeFlash(MPF)manufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplit-gatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternatea	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip

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详细参数

型号：
SST39SF040-70-4C-NH
功能描述：
闪存 512K X 8 70ns
RoHS：
否
制造商：
ON Semiconductor
数据总线宽度：
1 bit
存储类型：
Flash
存储容量：
2 MB
结构：
256 K x 8
接口类型：
SPI
电源电压-最大：
3.6 V
电源电压-最小：
2.3 V
最大工作电流：
15 mA
工作温度：
- 40 C to + 85 C
安装风格：
SMD/SMT
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳好佳好科技有限公司	SST39SF040-70-4C-NH	SST	1912+	PLCC	16850	绝对原装现货	询价
深圳市锦喆鸿电子有限公司	SST39SF040-70-4C-NH	SST	20+	32PLCC	9986		询价
深圳市兴灿科技有限公司	SST39SF040-70-4C-NH	SST	23+	PLCC	13500	代理授权直销,原装现货,假一罚十,长期稳定供应,特	询价
深圳市凯盛恒创科技有限公司	SST39SF040-70-4C-NH	SST	19+	PLCC	50000	全新原装	询价
深圳市瑞浩芯科技有限公司	SST39SF040-70-4C-NH	SST	21+	PLCC32	15000	全新原装现货,假一赔十	询价
深圳市杰顺创科技有限公司	SST39SF040-70-4C-NH	SST	21+	PLCC-32	2830	原装现货热卖	询价
深圳市富诚威科技有限公司	SST39SF040-70-4C-NH	SST	22+	PLCC32	2769	绝对原装!公司现货!	询价
深圳市河锋鑫科技有限公司	SST39SF040-70-4C-NH	SST	0336+	PLCC32	420	原装正品可含税交易	询价
深圳市仟禧电子有限公司	SST39SF040-70-4C-NH	SST	22+	PLCC32	10000	只做原装承诺假一罚十	询价
深圳市坤融电子科技有限公司	SST39SF040-70-4C-NH	SST	2022+	PLCC	4000	原装原厂代理可免费送样品	询价

更多SST39SF040-70-4C-NH供应商更新时间2024-5-1 8:04:00

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