600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th

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Fairchild

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isc N-Channel MOSFET Transistor

文件：264.22 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 600V Lower RDS(ON) : 3.892 W (Typ.)

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Fairchild

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isc N-Channel MOSFET Transistor

文件：346.24 Kbytes 页数：2 Pages

ISC

无锡固电

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：644.85 Kbytes 页数：9 Pages

Fairchild

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