N CHANNEL POWER MOSFETS

文件：278.83 Kbytes 页数：5 Pages

SAMSUNG

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.2A@ TC=25℃ · Drain Source Voltage -VDSS= 550V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.03 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：270.48 Kbytes 页数：2 Pages

ISC

无锡固电

Power Field Effect Transistor

文件：232.57 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Power Field Effect Transistor

文件：232.57 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

N-CHANNEL POWER MOSFETS

FEATURES • Lower RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

文件：297.88 Kbytes 页数：5 Pages

SAMSUNG

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