Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175oc Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS= 100V Lower RDS(ON) : 0.018 Ω (Typ.)

文件：652 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET

文件：1.0007 Mbytes 页数：7 Pages

SEMIPOWER

芯派科技

100V N-Channel Power MOSFET

文件：383.45 Kbytes 页数：6 Pages

TSC

台湾半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：697.38 Kbytes 页数：6 Pages

YANGJIE

扬杰电子