SGH25N120RUF规格书应用电路供应价格第2页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HM25N120T	文件：548.35 Kbytes Page：8 Pages	DAXIN?셲IGBTsofferlowerlossesandhigherenergyforapplicationsuchasmotordrive,UPS,inverterandothersoftswitchingapplications.	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
IXEH25N120	文件：182.34 Kbytes Page：4 Pages	NPT3IGBT Features •NPT3IGBT -positivetemperaturecoefficientof saturationvoltageforeasyparalleling -fastswitching -shorttailcurrentforoptimized performanceinresonantcircuits •optionalHiPerFRED™diode -fastreverserecovery -lowoperatingforward	IXYS IXYS Integrated Circuits Division	IXYS
IXGH25N120	文件：45.88 Kbytes Page：2 Pages	LowVCE(sat)HighspeedIGBT LowVCE(sat)HighspeedIGBT Features •InternationalstandardpackageJEDECTO-247AD •2ndgenerationHDMOSTMprocess •LowVCE(sat) -forlowon-stateconductionlosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DC	IXYS IXYS Integrated Circuits Division	IXYS
IXGH25N120A	文件：45.88 Kbytes Page：2 Pages	LowVCE(sat)HighspeedIGBT LowVCE(sat)HighspeedIGBT Features •InternationalstandardpackageJEDECTO-247AD •2ndgenerationHDMOSTMprocess •LowVCE(sat) -forlowon-stateconductionlosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DC	IXYS IXYS Integrated Circuits Division	IXYS
IXSH25N120A	文件：32.61 Kbytes Page：2 Pages	IGBT IGBTImprovedSCSOACapability Features •SecondgenerationHDMOSTMprocessLowVCE(sat) -forminimumon-stateconductionlosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •Uninterruptiblepowersupplies(UPS) •Switc	IXYS IXYS Integrated Circuits Division	IXYS
K25N120	文件：329.74 Kbytes Page：13 Pages	FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
KGF25N120KDA	文件：1.57082 Mbytes Page：8 Pages	Highspeedswitching	KECKEC CORPORATION KEC株式会社	KEC
KGH25N120NDA	文件：64.44 Kbytes Page：6 Pages	SEMICONDUCTORTECHNICALDATA GeneralDescription KECNPTIGBTsofferlowestlossesandhighestenergyefficiencyforapplicationsuchasIH(inductionheating),UPS,Generalinverterandothersoftswitchingapplications. FEATURES ·Highspeedswitching ·Highersystemefficiency ·Softcurrentturn-offwavef	KECKEC CORPORATION KEC株式会社	KEC
KGT25N120KDA	文件：567.69 Kbytes Page：8 Pages	SEMICONDUCTORTECHNICALDATA	KECKEC CORPORATION KEC株式会社	KEC
KGT25N120KDA	文件：573.35 Kbytes Page：8 Pages	Highspeedswitching	KECKEC CORPORATION KEC株式会社	KEC
KGT25N120NDA	文件：123.9 Kbytes Page：8 Pages	SEMICONDUCTORTECHNICALDATA	KECKEC CORPORATION KEC株式会社	KEC
KGT25N120NDH	文件：1.48621 Mbytes Page：7 Pages	Highspeedswitching	KECKEC CORPORATION KEC株式会社	KEC
MGY25N120	文件：153.58 Kbytes Page：5 Pages	InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtime.Fastswitchingcharacteri	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MGY25N120	文件：228.6 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtime.Fastswitchingcharacteri	MotorolaMotorola, Inc 摩托罗拉	Motorola
MGY25N120D	文件：256.3 Kbytes Page：6 Pages	InsulatedGateBipolarTransistorwithAnti-ParallelDiode InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblock	MotorolaMotorola, Inc 摩托罗拉	Motorola
MGY25N120D	文件：171.59 Kbytes Page：6 Pages	InsulatedGateBipolarTransistorwithAnti-ParallelDiode InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblock	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MIW25N120FA	文件：1.02325 Mbytes Page：7 Pages	TrenchandFieldStopIGBT1200V25A Features •LowVCE(sat)Trench-FSIGBTtechnology •Positivetemperaturecoefficient •Includingfast&softrecoveryanti-parallelFWD •Highshortcircuitcapability(10us) •HalogenFree.“Green”Device(Note1) •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
MIW25N120FA-BP	文件：1.02325 Mbytes Page：7 Pages	TrenchandFieldStopIGBT1200V25A Features •LowVCE(sat)Trench-FSIGBTtechnology •Positivetemperaturecoefficient •Includingfast&softrecoveryanti-parallelFWD •Highshortcircuitcapability(10us) •HalogenFree.“Green”Device(Note1) •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
NGTB25N120FLWG	文件：188.23 Kbytes Page：10 Pages	IGBT	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
NGTB25N120IHLWG	文件：175.61 Kbytes Page：9 Pages	Incorporatedintothedeviceisaruggedco?뭦ackagedfreewheelingdiodewithalowforwardvoltage.	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI

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详细参数

型号：
SGH25N120RUF
制造商：
FAIRCHILD
制造商全称：
Fairchild Semiconductor
功能描述：
Short Circuit Rated IGBT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	SGH25N120RUF	FAIRCHIL	08+(pbfree)	TO-3P	8866		询价
深圳市永贝尔科技有限公司	SGH25N120RUF	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
瀚佳科技(深圳)有限公司	SGH25N120RUF	FAIRC	2020+	TO-3P	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市艾宇特电子科技有限公司	SGH25N120RUF	FAIRCHILD/仙童	2048+	TO-3P	9851	只做原装正品现货!或订货假一赔十!	询价
深圳市国宇半导体科技有限公司	SGH25N120RUF	FAIRCHILD/仙童	23+	TO-3P	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	SGH25N120RUF	FAIRCHIL	22+	TO-3P	6000	十年配单,只做原装	询价
深圳市浩宇伟业电子有限公司	SGH25N120RUF	FAIRCHILD	22+		35000	OEM工厂,中国区10年优质供应商!	询价
深圳市跃创芯科技有限公司	SGH25N120RUF	FAIRCHILD/仙童	22+	TO-3P	25000	只做原装进口现货,专注配单	询价
深圳市芯为科技有限公司	SGH25N120RUF	FAIRC	2023+	TO-3P	16800	芯为只有原装,公司现货	询价
深圳市创新迹电子有限公司	SGH25N120RUF	FAIRCHILD/仙童	22+	TO-3P	25000	只做原装进口现货,专注配单	询价

更多SGH25N120RUF供应商更新时间2024-5-26 15:30:00

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