Low VCE(sat) High speed IGBT

Features

• International standard package JEDEC TO-247 AD

• 2nd generation HDMOSTM process

• Low VCE(sat)

- for low on-state conduction losses

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode power supplies

• Capacitor discharge systems

• Solid state relays

Advantages

• Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

• High power density

IXGH25N120A属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。IXYS Corporation制造生产的IXGH25N120A晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。