Features

● International standard packages

● 2nd generation HDMOSTM process

● Low VCE(sat)

- for low on-state conduction losses

● High current handling capability

● MOS Gate turn-on

- drive simplicity

● Voltage rating guaranteed at high temperature (125°C)

Applications

● AC motor speed control

● DC servo and robot drives

● DC choppers

● Uninterruptible power supplies (UPS)

● Switch-mode and resonant-mode power supplies

Advantages

● Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)

● High power density

IXGH25N100A属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。IXYS Integrated Circuits Division制造生产的IXGH25N100A晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。