Low VCE(sat) High speed IGBT

Low VCE(sat) High speed IGBT Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC

文件：45.88 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 50A 200W TO247AD

IXYS

艾赛斯

IGBT

IGBT Improved SCSOA Capability Features • Second generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switc

文件：32.61 Kbytes 页数：2 Pages

IXYS

艾赛斯

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：329.74 Kbytes 页数：13 Pages

INFINEON

英飞凌

High speed switching

文件：1.57082 Mbytes 页数：8 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司