首页>SCT040W120G3-4AG>规格书详情
SCT040W120G3-4AG中文资料汽车级碳化硅功率MOSFET，1200 V、40 mOhm（典型值，40 A），HiP247-4封装数据手册ST规格书
SCT040W120G3-4AG规格书详情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2428+ |
ZHIP |
8500 |
只做原装正品现货或订货假一赔十! |
询价 | ||
STMicroelectronics |
23+ |
HU3PAK-7 |
3652 |
原厂正品现货供应SIC全系列 |
询价 | ||
N/A |
24+ |
N/A |
8848 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
STMicroelectronics |
24+ |
原厂封装 |
12634 |
有挂就有货只做原装正品 |
询价 | ||
24+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ST/意法 |
25+ |
TO |
32360 |
ST/意法全新特价SCT040W120G3-4AG即刻询购立享优惠#长期有货 |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
询价 | |||
STN |
2405+ |
原厂封装 |
53931 |
只做原装优势现货库存 渠道可追溯 |
询价 | ||
ST |
24+ |
QFN |
92200 |
郑重承诺只做原装进口现货 |
询价 | ||
ST |
两年内 |
NA |
326 |
实单价格可谈 |
询价 |
