汽车级碳化硅功率MOSFET，1200 V、40 mOhm（典型值，40 A），HiP247-4封装

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application p • AEC-Q101 qualified \n• Very low RDS(on) over the entire temperature range \n• High speed switching performances \n• Very fast and robust intrinsic body diode \n• Very high operating junction temperature capability (TJ = 200 °C) \n• Source sensing pin for increased efficiency;

ST

意法半导体

Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Very high operating junction temperature capability (TJ = 200 °C) Applications • Switching mode power supply • Power supply for renewable energy

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STMICROELECTRONICS

意法半导体

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SCT/芯洲科技

上传：深圳市宇创芯科技有限公司

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SCT/芯洲科技

上传：深圳市宇创芯科技有限公司

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SCT/芯洲科技

上传：深圳市宇创芯科技有限公司