SCTW60N120G2

Marking：SCT60N120G2；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package

Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol

SCTW60N120G2AG

Marking：SCT60N120G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package

Features •AEC-Q101qualified •Highspeedswitchingperformance •Veryfastandrobustintrinsicbodydiode •Lowcapacitances •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •DC-DCconverters •SolarInvertersandrenewableenergy •SMPS •OBC Des

SCTW70N120G2V

Marking：SCT70N120G2；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 package

Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol

SCTW90N65G2V

Marking：SCT90N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package

Features •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitances Applications •Switchingapplications •Powersupplyforrenewableenergysystems •HighfrequencyDC-DCconverte

SCTWA35N65G2V-4

Marking：SCT35N65G2V；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package

Features •Veryfastandrobustintrinsicbodydiode •Lowcapacitances •Sourcesensingpinforincreasedefficiency •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol

SCTWA40N120G2AG

Marking：SCT40N120G2AG；Package：HiP247；Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package

Features •AEC-Q101qualified •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV •Onboardcharger(

SCTWA40N120G2V

Marking：SCT40N120G2V；Package：HiP247；Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package

Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol

SCTWA40N12G24AG

Marking：SCT40N12G24AG；Package：HiP247-4；Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247‑4 package

Features •AEC-Q101qualified •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •

SCTWA60N120G2-4

Marking：SCT60N120G2；Package：HiP247-4；Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package

Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Sourcesensingpinforincreasedefficiency Applications •Switchingmodepowersupply •DC-DCconverters •Industr

SCTWA60N120G2AG

Marking：SCT60N120G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package

Features •AEC-Q101qualified •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV •Onboardcharger(