丝印：SC2；Package：SOT-23-6L；20V Complementary Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：546.49 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：SC2；Package：SOT-23-6L；20V Complementary Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：546.49 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：SC2；Package：SOT-23-6L；20V Complementary Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：518.65 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：SC20J065A；Package：TO-220C-2L；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：528.64 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC20J065AD；Package：TO-3P-H-IS；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：495.47 Kbytes 页数：7 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC20J065A；Package：TO-247-2L；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：528.64 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC20J120A；Package：TO-247-2L；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：453.17 Kbytes 页数：7 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC20J120B；Package：TO-247；SiC Schottky Diode

APPLICATIONS Solar Inverters Switch Mode Power Supplies High Voltage DC/DC Converters Battery Chargers Motor Drives Uninterruptable power supplies EATURES High Blocking Voltage Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperatur

文件：483.17 Kbytes 页数：6 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC250N12G3AG；Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Application

文件：323.6 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：889.06 Kbytes 页数：25 Pages

TI

德州仪器