丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：921.15 Kbytes 页数：25 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：924.77 Kbytes 页数：26 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：889.06 Kbytes 页数：25 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：889.06 Kbytes 页数：25 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：889.06 Kbytes 页数：25 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：924.77 Kbytes 页数：26 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：924.77 Kbytes 页数：26 Pages

TI

德州仪器

丝印：SC245SEP；Package：TSSOP；SN54SC245-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Octal Bus Transceivers With 3-State Outputs

1 Features • Vendor item drawing available, VID V62/23616 • Total ionizing dose characterized at 30 krad(Si) – Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si) • Single-event effects (SEE) characterized: – Single event latch-up

文件：889.06 Kbytes 页数：25 Pages

TI

德州仪器