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PJS6603_S1_00001

Marking:SC3;Package:SOT-23-6L;30V Complementary Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJS6603_S2_00001

Marking:SC3;Package:SOT-23-6L;30V Complementary Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJS6603-AU_S1_000A1

Marking:SC3;Package:SOT-23-6L;30V Complementary Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PANJITPan Jit International Inc.

強茂強茂股份有限公司

SN54SC4T32MPWTSEP

Marking:SC32SEP;Package:TSSOP;SN54SC4T32-SEP Radiation Tolerant, Quadruple 2-Input Positive-OR Gates With Integrated Translation

1Features •Vendoritemdrawingavailable,VID V62/23629-01XE •Totalionizingdosecharacterizedat30krad(Si) –Totalionizingdoseradiationlotacceptance testing(TIDRLAT)foreverywaferlotto30 krad(Si) •Single-eventeffects(SEE)characterized: –Singleeventlatch-up(SEL)

TI1Texas Instruments

德州仪器美国德州仪器公司

SN54SC8T373MPWTSEP

Marking:SC373SEP;Package:TSSOP;SN54SC8T373-SEP Radiation Tolerant Octal Transparent D-Type Latches with 3-State Outputs

1Features •Vendoritemdrawingavailable,VID V62/25626-01XE •Radiation-TotalIonizingDose(TID): –TIDcharacterizedupto50krad(Si) –TIDperformanceassuranceupto30krad(Si) –RadiationLotAcceptanceTesting(RLAT)for everywaferlotupto30krad(Si) •Radiation-Single-Even

TITexas Instruments

德州仪器美国德州仪器公司

SN54SC8T374MPWTSEP

Marking:SC374SEP;Package:TSSOP;SN54SC8T374-SEP Radiation Tolerant Octal Edge-Triggered D-Type Flip-Flops with 3-State Outputs

1Features •Vendoritemdrawingavailable,VID V62/25627-01XE •Radiation-TotalIonizingDose(TID): –TIDcharacterizedupto50krad(Si) –TIDperformanceassuranceupto30krad(Si) –RadiationLotAcceptanceTesting(RLAT)for everywaferlotupto30krad(Si) •Radiation-Single-Even

TITexas Instruments

德州仪器美国德州仪器公司

SSC3H100H

Marking:SC3100;Package:DO-214AB;3A, 100V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101qualified Lowpowerloss,highefficiency Idealforautomatedplacement Highsurgecurrentcapability Moisturesensitivitylevel:level1,perJ-STD-020 RoHSCompliant Halogen-free APPLICATIONS Lowvoltage,highfrequency DC/DCconverter Freewheelingdiodes Reverse

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

SSC3H40H

Marking:SC340;Package:DO-214AB;3A, 40V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101qualified Lowpowerloss,highefficiency Idealforautomatedplacement Highsurgecurrentcapability Moisturesensitivitylevel:level1,perJ-STD-020 RoHSCompliant Halogen-free APPLICATIONS Lowvoltage,highfrequency DC/DCconverter Freewheelingdiodes Reverseba

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

SSC3H60H

Marking:SC360;Package:DO-214AB;3A, 60V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101qualified Lowpowerloss,highefficiency Idealforautomatedplacement Highsurgecurrentcapability Moisturesensitivitylevel:level1,perJ-STD-020 RoHSCompliant Halogen-free APPLICATIONS Lowvoltage,highfrequency DC/DCconverter Freewheelingdiodes Reverseba

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

STPSC31H12CWY

Marking:SC31H12CWY;Package:TO-247;2 X 15 A, 1200 V power Schottky silicon carbide diode

Features •AEC-Q101qualified •Noornegligiblereverserecovery •Switchingbehaviorindependentoftemperature •Robusthigh-voltageperiphery •PPAPcapable •OperatingTjfrom-40°Cto175°C •ECOPACK2compliant Applications •OBC(onboardbatterychargers) •PHEV-EVcharging

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    SC3

  • 制造商:

    PEPPERL+FUCHS

  • 功能描述:

    Inductive Namur

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更多SC3供应商 更新时间2025-6-28 13:31:00