丝印：SC3；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：521.12 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：SC3；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：521.12 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：SC3；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：481.93 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：SC32SEP；Package：TSSOP；SN54SC4T32-SEP Radiation Tolerant, Quadruple 2-Input Positive-OR Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23629-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.81373 Mbytes 页数：24 Pages

TI1

德州仪器

丝印：SC373SEP；Package：TSSOP；SN54SC8T373-SEP Radiation Tolerant Octal Transparent D-Type Latches with 3-State Outputs

1 Features • Vendor item drawing available, VID V62/25626-01XE • Radiation - Total Ionizing Dose (TID): – TID characterized up to 50krad(Si) – TID performance assurance up to 30krad(Si) – Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si) • Radiation - Single-Even

文件：1.16673 Mbytes 页数：28 Pages

TI

德州仪器

丝印：SC374SEP；Package：TSSOP；SN54SC8T374-SEP Radiation Tolerant Octal Edge-Triggered D-Type Flip-Flops with 3-State Outputs

1 Features • Vendor item drawing available, VID V62/25627-01XE • Radiation - Total Ionizing Dose (TID): – TID characterized up to 50krad(Si) – TID performance assurance up to 30krad(Si) – Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si) • Radiation - Single-Even

文件：1.14688 Mbytes 页数：29 Pages

TI

德州仪器

丝印：SC3100；Package：DO-214AB；3A, 100V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101 qualified Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage, high frequency DC/DC converter Freewheeling diodes Reverse

文件：433.12 Kbytes 页数：6 Pages

TSC

台湾半导体

丝印：SC340；Package：DO-214AB；3A, 40V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101 qualified Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage, high frequency DC/DC converter Freewheeling diodes Reverse ba

文件：433.06 Kbytes 页数：6 Pages

TSC

台湾半导体

丝印：SC360；Package：DO-214AB；3A, 60V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101 qualified Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage, high frequency DC/DC converter Freewheeling diodes Reverse ba

文件：433.15 Kbytes 页数：6 Pages

TSC

台湾半导体

丝印：SC31H12CWY；Package：TO-247；2 X 15 A, 1200 V power Schottky silicon carbide diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high-voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • ECOPACK 2 compliant Applications • OBC (on board battery chargers) • PHEV - EV charging

文件：216.63 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体