丝印：SC86SEP；Package：TSSOP；SN54SC4T86-SEP Radiation Tolerant, Quadruple 2-Input Exclusive-OR Gates

1 Features • Vendor item drawing available, VID V62/23630-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.05182 Mbytes 页数：24 Pages

TI1

德州仪器

丝印：SC86SEP；Package：TSSOP；SN54SC4T86-SEP Radiation Tolerant, Quadruple 2-Input Exclusive-OR Gates

1 Features • Vendor item drawing available, VID V62/23630-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.05182 Mbytes 页数：24 Pages

TI1

德州仪器

丝印：SC86SEP；Package：TSSOP；SN54SC4T86-SEP Radiation Tolerant, Quadruple 2-Input Exclusive-OR Gates

1 Features • Vendor item drawing available, VID V62/23630-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.05182 Mbytes 页数：24 Pages

TI1

德州仪器