丝印：SC32SEP；Package：TSSOP；SN54SC4T32-SEP Radiation Tolerant, Quadruple 2-Input Positive-OR Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23629-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.81373 Mbytes 页数：24 Pages

TI

德州仪器

丝印：SC32SEP；Package：TSSOP；SN54SC4T32-SEP Radiation Tolerant, Quadruple 2-Input Positive-OR Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23629-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.81373 Mbytes 页数：24 Pages

TI

德州仪器

丝印：SC32SEP；Package：TSSOP；SN54SC4T32-SEP Radiation Tolerant, Quadruple 2-Input Positive-OR Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23629-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.81373 Mbytes 页数：24 Pages

TI

德州仪器