丝印：SC20H12G2；Package：D2PAKHV；1200 V, 20 A, silicon carbide power Schottky diode

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丝印：SC20H12G2Y；Package：D2PAKHV；Automotive 1200 V, 20 A, silicon carbide power Schottky diode

Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant

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STMICROELECTRONICS

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