SCT4062KW7

Marking：SCT4062KW7；Package：TO-263-7L；N-channel SiC power MOSFET

●Features 1)Lowon-resistance 2)Fastswitchingspeed 3)Fastreverserecovery 4)Easytoparallel 5)Simpletodrive 6)Pb-freeleadplating;RoHScompliant ●Application ・Inductionheating ・Motordrives ・Solarinverters ・DC/DCconverters ・Switchmodepowersupplies

SCT4062KW7HR

Marking：SCT4062KW；Package：TO-263-7L；Automotive Grade N-channel SiC power MOSFET

●Features 1)QualifiedtoAEC-Q101 2)Lowon-resistance 3)Fastswitchingspeed 4)Fastreverserecovery 5)Easytoparallel 6)Simpletodrive 7)Pb-freeleadplating;RoHScompliant ●Application ・Automobile ・Switchmodepowersupplies

SCT4062KWAHR

Marking：SCT4062KWA；Package：TO-263-7LA；Automotive Grade N-channel SiC power MOSFET

●Features 7)Pb-freeleadplating;RoHScompliant 6)Simpletodrive 8)Widecreepagedistance=min.4.7mm 1)QualifiedtoAEC-Q101 2)Lowon-resistance 3)Fastswitchingspeed 4)Fastreverserecovery 5)Easytoparallel ●Application ・Automobile ・Switchmodepowersupplies

SCTH40N120G2V-7

Marking：SCT40N120G2V；Package：H2PAK-7；Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an H²PAK-7 package

Features •Veryhighoperatingjunctiontemperaturecapability(TJ=175°C) •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •SourceKelvinpinforincreasedefficiency Applications •Switchingmodepowersupply •DC-DCconverters •Industri

SCTH40N120G2V7AG

Marking：SCT40N120G2VAG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Features •AEC-Q101qualified •Veryhighoperatingjunctiontemperaturecapability(TJ=175°C) •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance Applications •Charger •Powersupplyforrenewableenergysystems •HighfrequencyDC-DCco

SCTHS250N120G3AG

Marking：SC250N12G3AG；Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Sourcesensingpinforincreasedefficiency Application

SCTW100N120G2AG

Marking：SCT100N120G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package

Features •AEC-Q101qualified •Highspeedswitchingperformance •Veryfastandrobustintrinsicbodydiode •Lowcapacitances •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Tractionforinverters •DC-DCconverters •Solarinverters •OBC Descriptio

SCTW100N65G2AG

Marking：SCT100N65G2AG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package

Features •AEC-Q101qualified •Veryhighoperatingtemperaturecapability(TJ=200°C) •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Tractionforinverters •DC-DCconverters •OBC Description ThissiliconcarbidePowerMOSFETdevicehasbeende

SCTW35N65G2V

Marking：SCTW35N65G2V；Package：HiP247；Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package

Features •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •DC-DCconverters •Industrialmotorcontrol

SCTW35N65G2VAG

Marking：SCT35N65G2VAG；Package：HiP247；Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

Features •AEC-Q101qualified •Veryfastandrobustintrinsicbodydiode •Lowcapacitance Applications •Switchingmodepowersupply •EVchargers •DC-DCconverters Description ThissiliconcarbidePowerMOSFETdevicehasbeendevelopedusingST’s advancedandinnovative2ndgeneratio