丝印：SC06SEP；Package：TSSOP；SN54SC6T06-SEP Radiation Tolerant, Hex Inverter Buffers/Drivers With Open-Drain Outputs

1 Features • Vendor item drawing available, VID V62/24616 • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL) immun

文件：1.02546 Mbytes 页数：24 Pages

TI

德州仪器

丝印：SC06SEP；Package：TSSOP；SN54SC6T06-SEP Radiation Tolerant, Hex Inverter Buffers/Drivers With Open-Drain Outputs

1 Features • Vendor item drawing available, VID V62/24616 • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL) immun

文件：1.02185 Mbytes 页数：23 Pages

TI

德州仪器

丝印：SC06SEP；Package：TSSOP；SN54SC6T06-SEP Radiation Tolerant, Hex Inverter Buffers/Drivers With Open-Drain Outputs

1 Features • Vendor item drawing available, VID V62/24616 • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL) immun

文件：1.02546 Mbytes 页数：24 Pages

TI

德州仪器

丝印：SC06SEP；Package：TSSOP；SN54SC6T06-SEP Radiation Tolerant, Hex Inverter Buffers/Drivers With Open-Drain Outputs

1 Features • Vendor item drawing available, VID V62/24616 • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL) immun

文件：1.02546 Mbytes 页数：24 Pages

TI

德州仪器