丝印：SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23627-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.05358 Mbytes 页数：25 Pages

TI

德州仪器

丝印：SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23627-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：997.33 Kbytes 页数：24 Pages

TI

德州仪器

丝印：SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23627-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.05358 Mbytes 页数：25 Pages

TI

德州仪器

丝印：SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23627-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.05358 Mbytes 页数：25 Pages

TI

德州仪器

丝印：SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23627-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：997.33 Kbytes 页数：24 Pages

TI

德州仪器

丝印：SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23627-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：997.33 Kbytes 页数：24 Pages

TI

德州仪器

丝印：SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23627-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.05358 Mbytes 页数：25 Pages

TI

德州仪器