Silicon N Channel IGBT High Speed Power Switching

1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ 3. High speed switching: tr= 60 ns typ, tf= 200 ns typ. 4. Low leak current: ICES= 1 A max 5. Isolated package TO-220FL

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Silicon N Channel IGBT High speed power switching

* Trench gate and thin wafer technology (G6H-II series) * Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ * High speed switching: tr= 60 ns typ, tf= 200 ns typ. * Low leak current: ICES= 1 A max

文件：160.93 Kbytes 页数：7 Pages

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Silicon N Channel IGBT High Speed Power Switching

1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ 3. High speed switching: tr= 60 ns typ, tf= 200 ns typ. 4. Low leak current: ICES= 1 A max 5. Isolated package TO-220FL

文件：151.02 Kbytes 页数：7 Pages

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Silicon N Channel IGBT High Speed Power Switching

1. Trench gate and thin wafer technology (G6H-II series)\n2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ\n3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.\n4. Low leak current: ICES= 1 A max\n5. Isolated package TO-220FL

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N-Channel IGBT

*  Trench gate and thin wafer technology (G6H-II series)\n*  Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ\n*  High speed switching: tr= 60 ns typ, tf= 200 ns typ.\n*  Low leak current: ICES= 1 A max

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Silicon N Channel IGBT High Speed Power Switching

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