Silicon N Channel IGBT High Speed Power Switching

* Low collector to emitter saturation voltage VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)  * Gate to emitter voltage rating 30 V * Pb-free lead plating and chip bonding

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RENESAS

瑞萨

Silicon N Channel IGBT High Speed Power Switching

文件：99.47 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N-Channel IGBT High Speed Power Switching / TO-3PFM Package

* Low collector to emitter saturation voltage\n   VCE(sat)= 1.8 V typ. (IC= 40 A, VGE= 15V, Ta = 25°C)\n\n* Gate to emitter voltage rating 30 V\n\n* Pb-free lead plating and chip bonding

Renesas

瑞萨

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

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Teccor

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

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Teccor

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

文件：212.84 Kbytes 页数：12 Pages

Littelfuse

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