RJK60S3DPD

600V - 12A - SJ MOS FET High Speed Power Switching

Features •SuperjunctionMOSFET •Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) •Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25°C)

RJK60S3DPD-00J2

600V - 12A - SJ MOS FET High Speed Power Switching

Features •SuperjunctionMOSFET •Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) •Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25°C)

RJK60S3DPE

600V - 12A - SJ MOS FET High Speed Power Switching

Features ●SuperjunctionMOSFET ●Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) ●Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50Ω,Rg=10,Ta=25°C)

RJK60S3DPE-00J3

600V - 12A - SJ MOS FET High Speed Power Switching

Features ●SuperjunctionMOSFET ●Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) ●Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50Ω,Rg=10,Ta=25°C)

RJK60S3DPP-E0

600V - 12A - SJ MOS FET High Speed Power Switching

*SuperjunctionMOSFET *Lowon-resistance *RDS(on)=0.35typ.(atID=6A,VGS=10V,Ta=25C) *Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25C)

RJK60S3DPP-E0-T2

600V - 12A - SJ MOS FET High Speed Power Switching

*SuperjunctionMOSFET *Lowon-resistance *RDS(on)=0.35typ.(atID=6A,VGS=10V,Ta=25C) *Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25C)

DC60S3

3-7Amp60VdcDCOutput

DC60S3

panelmount

DC60S3

THEGLOBALEXPERTINSOLIDSTATERELAYTECHNOLOGY

DPASeries •16PinDIPSSR •Ratingsto1A@280VAC •SCRoutput •Voltageorcurrent-controlinput •Zero-crossing(resistiveloads)output

DC60S3

PANELMOUNT

Features •Ratingsfrom3Ato7A@60VDC •Bi-PolarTransistorOutput •ULApproved,CEComplianttoEN60950-1 •ImprovedSEMSScrewandWasher •RedesignedHousingwithAnti-RotationBarriers •ACandDCControl •EpoxyFreeDesign

L60S3

SemiconductorFuses