600V - 12A - SJ MOS FET High Speed Power Switching

Features • Superjunction MOSFET • Low on-resistance RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50, Rg = 10, Ta = 25°C)

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600V - 12A - SJ MOS FET High Speed Power Switching

Features • Superjunction MOSFET • Low on-resistance RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50, Rg = 10, Ta = 25°C)

文件：94.15 Kbytes 页数：8 Pages

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600V - 12A - SJ MOS FET High Speed Power Switching

Features ● Superjunction MOSFET ● Low on-resistance RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) ● High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50Ω, Rg = 10, Ta = 25°C)

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600V - 12A - SJ MOS FET High Speed Power Switching

Features ● Superjunction MOSFET ● Low on-resistance RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) ● High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50Ω, Rg = 10, Ta = 25°C)

文件：96.25 Kbytes 页数：8 Pages

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600V - 12A - SJ MOS FET High Speed Power Switching

* Superjunction MOSFET * Low on-resistance * RDS(on)= 0.35 typ. (at ID= 6 A, VGS= 10 V, Ta = 25C) * High speed switching tf= 21 ns typ. (at ID= 6 A, VGS= 10 V, RL= 50 , Rg = 10 , Ta = 25C)

文件：85.06 Kbytes 页数：7 Pages

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600V - 12A - SJ MOS FET High Speed Power Switching

* Superjunction MOSFET * Low on-resistance * RDS(on)= 0.35 typ. (at ID= 6 A, VGS= 10 V, Ta = 25C) * High speed switching tf= 21 ns typ. (at ID= 6 A, VGS= 10 V, RL= 50 , Rg = 10 , Ta = 25C)

文件：85.06 Kbytes 页数：7 Pages

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600V - 12A - SJ MOS FET High Speed Power Switching

• Superjunction MOSFET\n• Low on-resistance\n   RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)\n• High speed switching\n   tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50, Rg = 10, Ta = 25°C);

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600V - 12A - SJ MOS FET High Speed Power Switching

● Superjunction MOSFET\n● Low on-resistance\n   RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)\n● High speed switching\n   tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50Ω, Rg = 10, Ta = 25°C);

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600V - 12A - SJ MOS FET High Speed Power Switching

* Superjunction MOSFET\n\n* Low on-resistance\n\n* RDS(on)= 0.35 typ. (at ID= 6 A, VGS= 10 V, Ta = 25C)\n\n*  High speed switching\ntf= 21 ns typ. (at ID= 6 A, VGS= 10 V, RL= 50 , Rg = 10 , Ta = 25C)

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