600V - 12A - SJ MOS FET High Speed Power Switching

Features • Superjunction MOSFET • Low on-resistance RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50, Rg = 10, Ta = 25°C)

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.44Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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无锡固电

600V - 12A - SJ MOS FET High Speed Power Switching

Features • Superjunction MOSFET • Low on-resistance RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50, Rg = 10, Ta = 25°C)

文件：94.15 Kbytes 页数：8 Pages

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600V - 12A - SJ MOS FET High Speed Power Switching

• Superjunction MOSFET\n• Low on-resistance\n   RDS(on) = 0.35 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)\n• High speed switching\n   tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50, Rg = 10, Ta = 25°C);

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