600V - 0.1A - MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting

文件：193.89 Kbytes 页数：7 Pages

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600V - 0.1A - MOS FET High Speed Power Switching

文件：93.18 Kbytes 页数：7 Pages

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600V - 0.1A - MOS FET High Speed Power Switching

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting

文件：97.55 Kbytes 页数：7 Pages

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High Speed Power Switching

文件：94.32 Kbytes 页数：7 Pages

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?쏬O-PRO??COMMON MODE TOROIDS HORIZONTAL MOUNT

文件：1.29344 Mbytes 页数：2 Pages

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