RJK6011DJE

Silicon N Channel MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=35Ωtyp.(atID=0.05A,VGS=10V,Ta=25°C) •Lowdrivecurrent •Highdensitymounting

RJK6011DJE

High Speed Power Switching

RJK6011DJE-00-Z0

Silicon N Channel MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=35Ωtyp.(atID=0.05A,VGS=10V,Ta=25°C) •Lowdrivecurrent •Highdensitymounting

RJK6011DJE_15

600V - 0.1A - MOS FET High Speed Power Switching

RL-6011

?쏬O-PRO??COMMONMODETOROIDSHORIZONTALMOUNT

RS6011P

Compactandgoodoperationalfeel,suitableformixingconsolefaders

SBT-BGA-6011

Excellentsignalintegrityathighfrequencies

SDS6011

SchmittTriggerOptocoupler

SDS6011

Highdatadate–1MHz(NRZ)

Features Highdatadate–1MHz(NRZ) Freefromlatchupandoscillation MicroprocessorcompatibleDrive Logiccompatibleoutputsinks16mA@0.4V Guaranteedon/offthresholdhysteresis Highcommonmoderejectionratio Fastswitching(100nStypicaltRandtF) Widesupplyvol

SG-BGA-6011

Ballguidepreventsovercompressionofelastomer