Silicon N Channel IGBT High speed power switching

Features ● Trench gate and thin wafer technology (G6H-II series) ● High speed switching: tr =80 ns typ., tf = 150 ns typ. ● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ● Low leak current: ICES = 1 μA max. ● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.

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RENESAS

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Silicon N channel IGBT, 360V, 30A

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RENESAS

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IP68 rating tested at 1.054kg/sq cm (15lb/sq in) 10m depth for 2 weeks

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ETC1List of Unclassifed Manufacturers

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Enhanced Single Supply Hi-Speed USB ULPI Transceiver

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Microchip

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