30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, sw

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INTERSIL

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -30A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 65mΩ(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：370.97 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 60 V (D-S) MOSFET

文件：939.22 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

MOSFET P-CH 60V 30A TO-220AB

ONSEMI

安森美半导体