42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：112.48 Kbytes 页数：8 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 42A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.12 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30 V (D-S) MOSFET

文件：150.88 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP42N03LT is suppl

文件：61.53 Kbytes 页数：8 Pages

PHI

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP42N03LT is suppl

文件：63.24 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 42A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：345.11 Kbytes 页数：2 Pages

ISC

无锡固电