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30P06

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

MSD30P06

P-Channel60-V(D-S)MOSFET

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

MTB30P06

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托罗拉

MTB30P06KFP

P-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTB30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB30P06V

TMOSPOWERFET30AMPERES60VOLTS

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS

MotorolaMotorola, Inc

摩托罗拉

MTB30P06V

PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP?묬hannelD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB30P06VG

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTBV30P06V

PowerMOSFET30Amps,60VoltsP-ChannelD2PAK

ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP30P06

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托罗拉

MTP30P06V

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM

TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM P–ChannelEnhancement–ModeSiliconGateTMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60volt

MotorolaMotorola, Inc

摩托罗拉

MTP30P06V

P?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP30P06V

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

MTP30P06VG

P?묬hannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NCE30P06J

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

无锡新洁能股份无锡新洁能股份有限公司

RFG30P06

30A,60V,0.065Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP30P06

30A,60V,0.065Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyaredesignedforuseinapplicationssuchasswitchingregulators,sw

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP30P06

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SF30P06C

GlassPassivatedSuperFastRecoveryRectifier

YENYOYenyo Technology Co., Ltd.

元耀科技元耀科技股份有限公司

供应商型号品牌批号封装库存备注价格
VBsemi(微碧)
20+
TO-220AB-3
50
询价
VBSEMI/台湾微碧
23+
TO-220
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022
TO220
80000
原装现货,OEM渠道,欢迎咨询
询价
FAIRCHILD/仙童
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
HARRIS/哈里斯
23+
TO-220
90000
原装原盘
询价
HARRIS
23+
TOP220
4500
全新原装、诚信经营、公司现货销售
询价
ANAREN
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
Anaren
2018+
SMD
5500
长期供应原装现货实单可谈
询价
ANAREN
SMT
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
ANM
D/CCALL
200
询价
更多RFP30P06-VB供应商 更新时间2024-6-6 9:30:00