TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

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MOTOROLA

摩托罗拉

TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHMTMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET d

恩XP

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

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ONSEMI

安森美半导体

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

文件：247.61 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

文件：241.07 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

文件：241.07 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed an

文件：241.07 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P-Channel Logic Level Enhancement Mode Power MOSFET

文件：294.22 Kbytes 页数：9 Pages

CYSTEKEC

全宇昕科技

P-Channel Enhancement Mode Power MOSFET

文件：414.85 Kbytes 页数：8 Pages

CYSTEKEC

全宇昕科技

P-Channel Enhancement Mode Power MOSFET

文件：414.85 Kbytes 页数：8 Pages

CYSTEKEC

全宇昕科技