MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and

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RFMD

威讯联合

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and

文件：191.86 Kbytes 页数：10 Pages

RFMD

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MEDIUM POWER AMPLIFIER

Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher powe

文件：112.62 Kbytes 页数：8 Pages

RFMD

威讯联合

MEDIUM POWER AMPLIFIER

Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher powe

文件：112.62 Kbytes 页数：8 Pages

RFMD

威讯联合

MEDIUM POWER AMPLIFIER

Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher powe

文件：112.62 Kbytes 页数：8 Pages

RFMD

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HIGH POWER LINEAR UHF AMPLIFIER

Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

文件：70.27 Kbytes 页数：8 Pages

RFMD

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HIGH POWER LINEAR UHF AMPLIFIER

Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

文件：70.27 Kbytes 页数：8 Pages

RFMD

威讯联合

HIGH POWER LINEAR UHF AMPLIFIER

Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

文件：70.27 Kbytes 页数：8 Pages

RFMD

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Dual-Band, Image-Reject Downconverters For GSM Applications

The RF210A and RF210B devices are available as a dual-band front end for Global System for Mobile Communications (GSM) handset applications. Both of these highly integrated, monolithic devices are optimized for dual-band use in GSM900/DCS1800 or GSM 900/PCS1900 applications. The devices include tw

文件：77.94 Kbytes 页数：8 Pages

CONEXANT

Dual-Band, Image-Reject Downconverters For GSM Applications

The RF210A and RF210B devices are available as a dual-band front end for Global System for Mobile Communications (GSM) handset applications. Both of these highly integrated, monolithic devices are optimized for dual-band use in GSM900/DCS1800 or GSM 900/PCS1900 applications. The devices include tw

文件：77.94 Kbytes 页数：8 Pages

CONEXANT