MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and

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RFMD

威讯联合

MEDIUM POWER LINEAR AMPLIFIER

文件：215.87 Kbytes 页数：10 Pages

RFMD

威讯联合

Transmissive Optical Sensor with Phototransistor Output

Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc

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VISHAYVishay Siliconix

威世威世科技公司

VAUX POWER-DISTRIBUTION SWITCHES

文件：265.33 Kbytes 页数：17 Pages

TI

德州仪器

VAUX POWER-DISTRIBUTION SWITCHES

文件：265.33 Kbytes 页数：17 Pages

TI

德州仪器