HIGH POWER LINEAR UHF AMPLIFIER

Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

文件：70.27 Kbytes 页数：8 Pages

RFMD

威讯联合

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1101~RN1106

文件：256.73 Kbytes 页数：7 Pages

TOSHIBA

东芝

Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

文件：572.07 Kbytes 页数：8 Pages

TOSHIBA

东芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1101~RN1106

文件：559.29 Kbytes 页数：8 Pages

TOSHIBA

东芝