HIGH POWER UHF AMPLIFIER

Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at

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RFMD

威讯联合

PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES

PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES DC Power Dissipation @ Ta = 25°C 250 mW Reverse Breakdown Voltage @ 10µA 30 V Min Max Reverse Current (IR) @ Ta = 25° C 0.1 µA @ 25 Vdc Operating Temperature (Topr) -55 to + 125° C Storage T

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KNOX

AUTOSWITCHING POWER MULTIPLEXER

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TI

德州仪器

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing

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PANASONIC

松下