MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2114 is a medium to high power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 1MHz

文件：73.36 Kbytes 页数：6 Pages

RFMD

威讯联合

MEDIUM POWER LINEAR AMPLIFIER

Qorvo

威讯联合

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2114 is a medium to high power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 1MHz

文件：73.36 Kbytes 页数：6 Pages

RFMD

威讯联合

PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES

PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES DC Power Dissipation @ Ta = 25°C 250 mW Reverse Breakdown Voltage @ 10µA 30 V Min Max Reverse Current (IR) @ Ta = 25° C 0.1 µA @ 25 Vdc Operating Temperature (Topr) -55 to + 125° C Storage T

文件：35.68 Kbytes 页数：1 Pages

KNOX

AUTOSWITCHING POWER MULTIPLEXER

文件：310.13 Kbytes 页数：18 Pages

TI

德州仪器

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing

文件：235.97 Kbytes 页数：17 Pages

PANASONIC

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