MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2114 is a medium to high power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 1MHz

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RFMD

威讯联合

PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES

PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES DC Power Dissipation @ Ta = 25°C 250 mW Reverse Breakdown Voltage @ 10µA 30 V Min Max Reverse Current (IR) @ Ta = 25° C 0.1 µA @ 25 Vdc Operating Temperature (Topr) -55 to + 125° C Storage T

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KNOX

AUTOSWITCHING POWER MULTIPLEXER

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TI

德州仪器

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing

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PANASONIC

松下