HIGH POWER UHF AMPLIFIER

Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at

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RFMD

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HIGH EFFICIENCY 400MHZ AMPLIFIER

General Description The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM a

文件：173.89 Kbytes 页数：8 Pages

RFMD

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HIGH EFFICIENCY 400MHZ AMPLIFIER

General Description The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters between 400MHz and 500MHz or ISM a

文件：173.89 Kbytes 页数：8 Pages

RFMD

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HIGH EFFICIENCY 2V POWER AMPLIFIER

Product Description The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digita

文件：82.1 Kbytes 页数：8 Pages

RFMD

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HIGH EFFICIENCY 2V POWER AMPLIFIER

Product Description The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digita

文件：82.1 Kbytes 页数：8 Pages

RFMD

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Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

文件：89.58 Kbytes 页数：9 Pages

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Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

文件：89.58 Kbytes 页数：9 Pages

ETCList of Unclassifed Manufacturers

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Image-Reject Front End for Dual or Tri-Band GSM Applications

[Conexant] The RF212 device is available as a dual-band (EGSM900/DCS1800) front end or as a tri-band (EGSM900/DCS1800/PCS1900) front end for Global System for Mobile Communications (GSM) mobile telephony applications. Each device integrates all the required front-end components after the frequenc

文件：89.58 Kbytes 页数：9 Pages

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HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

文件：104.66 Kbytes 页数：6 Pages

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HIGH POWER LINEAR AMPLIFIER

Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati

文件：51.51 Kbytes 页数：6 Pages

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