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RF2157PCBA

PCS CDMA/TDMA 3V POWER AMPLIFIER

Product Description The RF2157 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

文件:192.16 Kbytes 页数:10 Pages

RFMD

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RF2161

3V W-CDMA POWER 1900MHZ 3V LINEAR POWER AMPLIFIER

Product Description The RF2161 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 a

文件:150.92 Kbytes 页数:8 Pages

RFMD

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RF2161PCBA

3V W-CDMA POWER 1900MHZ 3V LINEAR POWER AMPLIFIER

Product Description The RF2161 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 a

文件:150.92 Kbytes 页数:8 Pages

RFMD

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RF2162

3V 900MHZ LINEAR AMPLIFIER

Product Description The RF2162 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V C

文件:218.02 Kbytes 页数:10 Pages

RFMD

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RF2162PCBA

3V 900MHZ LINEAR AMPLIFIER

Product Description The RF2162 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V C

文件:218.02 Kbytes 页数:10 Pages

RFMD

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RF2163

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

文件:96.87 Kbytes 页数:6 Pages

RFMD

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RF2163PCBA

3V, 2.5GHZ LINEAR POWER AMPLIFIER

Product Description The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifi

文件:96.87 Kbytes 页数:6 Pages

RFMD

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RF2172

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a

文件:292.11 Kbytes 页数:12 Pages

RFMD

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RF2172PCBA-H

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a

文件:292.11 Kbytes 页数:12 Pages

RFMD

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RF2172PCBA-L

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a

文件:292.11 Kbytes 页数:12 Pages

RFMD

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技术参数

  • 说明:

    传感器硬件与配件 2\ PHOTO SENSOR REFLECTOR XU

  • 描述/功能:

    Round reflector

  • 商标:

    Schneider Electric

  • 工厂包装数量:

    1

  • 子类别:

    Sensors

  • 产品类型:

    Sensor Hardware

  • 用于:

    All XU Photoelectric Sensors

供应商型号品牌批号封装库存备注价格
RFMD
12+
SOP14
100000
全新原装,公司大量现货,绝对正品供应
询价
RFMICRO
24+/25+
13819
原装正品现货库存价优
询价
RFMD
10+
SOP16
6000
原装现货价格有优势量多可发货
询价
PHI
23+
QFN/6*6
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
ROHM
24+
SOD106
5000
原装现货
询价
RFM
05+
原厂原装
42551
只做全新原装真实现货供应
询价
RF
17+
SOT-163
6200
100%原装正品现货
询价
24+
100
真实现货库存
询价
RFMD
16+
SOP14
8000
原装现货请来电咨询
询价
RF
24+
QFN
6868
原装现货,可开13%税票
询价
更多RF2供应商 更新时间2026-1-24 11:04:00