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型号	下载订购	功能描述	制造商上传企业	LOGO
RF2125PCBA	文件：104.66 Kbytes Page：6 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati 文件：104.66 Kbytes 页数：6 Pages	RFMD 威讯联合	RFMD
RF2125PPCBA	文件：51.51 Kbytes Page：6 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stati 文件：51.51 Kbytes 页数：6 Pages	RFMD 威讯联合	RFMD
RF2126	文件：184.34 Kbytes Page：10 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO 文件：184.34 Kbytes 页数：10 Pages	RFMD 威讯联合	RFMD
RF2126	文件：57.01 Kbytes Page：6 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO 文件：57.01 Kbytes 页数：6 Pages	RFMD 威讯联合	RFMD
RF2126_07	文件：184.34 Kbytes Page：10 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO 文件：184.34 Kbytes 页数：10 Pages	RFMD 威讯联合	RFMD
RF2126PCBA	文件：57.01 Kbytes Page：6 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO 文件：57.01 Kbytes 页数：6 Pages	RFMD 威讯联合	RFMD
RF2126PCK	文件：184.34 Kbytes Page：10 Pages	HIGH POWER LINEAR AMPLIFIER Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and PO 文件：184.34 Kbytes 页数：10 Pages	RFMD 威讯联合	RFMD
RF2127	文件：63.95 Kbytes Page：6 Pages	MEDIUM POWER LINEAR AMPLIFIER Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req 文件：63.95 Kbytes 页数：6 Pages	RFMD 威讯联合	RFMD
RF2127PCBA	文件：63.95 Kbytes Page：6 Pages	MEDIUM POWER LINEAR AMPLIFIER Product Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters req 文件：63.95 Kbytes 页数：6 Pages	RFMD 威讯联合	RFMD
RF2128	文件：60.95 Kbytes Page：4 Pages	MEDIUM POWER LINEAR AMPLIFIER Product Description The RF2128 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz ISM applications such as WLAN and 文件：60.95 Kbytes 页数：4 Pages	RFMD 威讯联合	RFMD

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技术参数

说明：
传感器硬件与配件 2\ PHOTO SENSOR REFLECTOR XU
描述/功能：
Round reflector
商标：
Schneider Electric
工厂包装数量：
1
子类别：
Sensors
产品类型：
Sensor Hardware
用于：
All XU Photoelectric Sensors

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	RF2464	RFMD	12+	SOP14	100000	全新原装,公司大量现货,绝对正品供应	询价
深圳市联世界科技有限公司	RF2304TR13	RFMICRO	24+/25+		13819	原装正品现货库存价优	询价
深圳市益百分电子有限公司	RF2320	RFMD	10+	SOP16	6000	原装现货价格有优势量多可发货	询价
深圳市毅创腾电子科技有限公司	RF2001	PHI	23+	QFN/6*6	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
千层芯半导体(深圳)有限公司	RF201L2S	ROHM	24+	SOD106	5000	原装现货	询价
芯有半导体（深圳）有限公司	RF2108TR13	RFM	05+	原厂原装	42551	只做全新原装真实现货供应	询价
深圳市恒创达实业有限公司	RF2361TR7	RF	17+	SOT-163	6200	100%原装正品现货	询价
深圳市一线半导体有限公司	RF2104(场效应管)		24+		100	真实现货库存	询价
深圳市利加科技有限公司	RF2103P	RFMD	16+	SOP14	8000	原装现货请来电咨询	询价
深圳市欧立现代科技有限公司	RF2958	RF	24+	QFN	6868	原装现货,可开13%税票	询价

更多RF2供应商更新时间2026-1-23 11:04:00

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