| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:318.65 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
10V Drive Nch MOSFET 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant 文件:235.33 Kbytes 页数:6 Pages | ROHM 罗姆 | ROHM | ||
10V Drive Nch MOSFET Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. Application Switching 文件:1.15857 Mbytes 页数:6 Pages | ROHM 罗姆 | ROHM | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:343.55 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:349.67 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:318.3 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
N-Channel 650-V (D-S) Super Junction MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light 文件:1.1545 Mbytes 页数:11 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
10V Drive Nch MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply 文件:1.27253 Mbytes 页数:7 Pages | ROHM 罗姆 | ROHM | ||
丝印:TL;Package:LPTS;10V Drive Nch MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply 文件:1.18029 Mbytes 页数:6 Pages | ROHM 罗姆 | ROHM | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:350.49 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-P+R
- 性质:
开关管 (SW)
- 封装形式:
贴片封装
- 极限工作电压:
- 最大电流允许值:
0.1A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
KSR2110,
- 最大耗散功率:
- 放大倍数:
- 图片代号:
H-15
- vtest:
0
- htest:
999900
- atest:
0.1
- wtest:
0
技术参数
- IF(A):
0.2
- VRRM(V):
6000
- IFSM(A):
30
- VF(V):
5
- @IVA(A):
0.2
- IR (μA)TA=25℃:
5
- TJ(℃):
/
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROCKWE |
23+ |
PLCC |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
KEMET |
24+ |
NA |
12000 |
原装现货,专业配单专家 |
询价 | ||
ROHM/罗姆 |
18+ |
TO-220-3 |
30491 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
ROHM/罗姆 |
专业铁帽 |
TO-3P |
1013 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
ROHM/罗姆 |
21+ |
TO-263 |
14000 |
询价 | |||
ROHM/罗姆 |
2022+ |
90 |
全新原装 货期两周 |
询价 | |||
Rohm |
20+ |
N/A |
938 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
ROHM/罗姆 |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
询价 | ||
ARCOTRONI |
23+ |
NA |
1231 |
专做原装正品,假一罚百! |
询价 | ||
ROHM |
1923+ |
SOT263 |
3000 |
绝对进口原装现货 |
询价 |
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