Fast Recovery Rectifier (250 Amperes Average 1600 Volts)

Features: □ Fast Recovery Times □ Soft Recovery Characteristics □ Standard and Reverse Polarities □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltages □ Special Electrical Selection for Parallel and Series Operation □ Glzaed Ceramic Seal

文件：498.28 Kbytes 页数：4 Pages

POWEREX

Fast Recovery Rectifier (350Amperes Average 1600 Volts)

Fast Recovery Rectifier 350 Amperes Average 1600 Volts

文件：768.65 Kbytes 页数：4 Pages

POWEREX

10V Drive Nch MOSFET

10V Drive Nch MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. Applications Switching Structure Silicon N-channel MOSFET

文件：237.41 Kbytes 页数：6 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.59 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.14 Kbytes 页数：2 Pages

ISC

无锡固电

10V Drive Nch MOSFET

Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Application Switching Power Supply

文件：237.11 Kbytes 页数：6 Pages

ROHM

罗姆

10V Drive Nch MOSFET

• Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. • Application Switching • Structure Silicon N-channel MOSFET

文件：1.16191 Mbytes 页数：6 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.58 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.14 Kbytes 页数：2 Pages

ISC

无锡固电

10V Drive Nch MOSFET

Features 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 7) Pb-free lead plating ; RoHS compliant Application Switching Power Supply

文件：1.28345 Mbytes 页数：7 Pages

ROHM

罗姆