150W, 65V, DC – 2.7 GHz, GaN RF Transistor

Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.8 1  Operating Voltage: 65 V  Low thermal resistance package  CW and Pulse capable  7.2 x 6.6 mm package

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威讯联合

150W, 65V, DC ??2.7 GHz, GaN RF Transistor

文件：2.40828 Mbytes 页数：25 Pages

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VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

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PERKINELMER

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

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GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.

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