1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features • Frequency: 0.96 to 1.215 GHz • Output Power (P3dB)1: 1862 W • Linear Gain1: 22.5 dB • Typical PAE3dB 1: 77.2 • Operating Voltage: 65 V • CW and Pulse capable

文件：3.13518 Mbytes 页数：26 Pages

QORVO

威讯联合

1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

文件：1.43585 Mbytes 页数：18 Pages

TRIQUINT

1800 Watt, 65 Volt, 1.0 - 1.1 GHz, GaN RF Input-Matched Transistor

The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and te • Frequency Range: .96 to 1.215 GHz\n• Output Power (P3dB1): 1862 Watt\n• Linear Gain: 22.5 dB\n• Typical PAE3dB1: 77.2 %\n• Operating voltage: 65 V\n• CW and Pulse capable;

Qorvo

威讯联合

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features • Frequency: 0.96 to 1.215 GHz • Output Power (P3dB)1: 1862 W • Linear Gain1: 22.5 dB • Typical PAE3dB 1: 77.2 • Operating Voltage: 65 V • CW and Pulse capable

文件：3.13518 Mbytes 页数：26 Pages

QORVO

威讯联合

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features Frequency: 0.96 to 1.215 GHz Output Power (P3dB)1: 1862 W Linear Gain1: 22.5 dB Typical PAE3dB 1: 77.2 Operating Voltage: 65 V CW and Pulse capable

文件：3.14308 Mbytes 页数：26 Pages

QORVO

威讯联合

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features Frequency: 0.96 to 1.215 GHz Output Power (P3dB)1: 1862 W Linear Gain1: 22.5 dB Typical PAE3dB 1: 77.2 Operating Voltage: 65 V CW and Pulse capable

文件：3.14308 Mbytes 页数：26 Pages

QORVO

威讯联合

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features Frequency: 0.96 to 1.215 GHz Output Power (P3dB)1: 1862 W Linear Gain1: 22.5 dB Typical PAE3dB 1: 77.2 Operating Voltage: 65 V CW and Pulse capable

文件：3.14308 Mbytes 页数：26 Pages

QORVO

威讯联合

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features Frequency: 0.96 to 1.215 GHz Output Power (P3dB)1: 1862 W Linear Gain1: 22.5 dB Typical PAE3dB 1: 77.2 Operating Voltage: 65 V CW and Pulse capable

文件：3.14308 Mbytes 页数：26 Pages

QORVO

威讯联合

1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

文件：1.43585 Mbytes 页数：18 Pages

TRIQUINT

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

文件：3.15518 Mbytes 页数：27 Pages

QORVO

威讯联合