QPD1025中文资料1800 Watt, 65 Volt, 1.0 - 1.1 GHz, GaN RF Input-Matched Transistor数据手册Qorvo规格书

描述 Description

The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.

特性 Features

• Frequency Range: .96 to 1.215 GHz
• Output Power (P3dB1): 1862 Watt
• Linear Gain: 22.5 dB
• Typical PAE3dB1: 77.2 %
• Operating voltage: 65 V
• CW and Pulse capable

应用 Application

• IFF Transponders
• Avionics