QPD1013中文资料DC - 2.7 GHz, 150 Watt, 65 V GaN RF Transistor数据手册Qorvo规格书

描述 Description

The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz.  This is a single stage unmatched power amplifier transistor in an over-molded plastic package.  The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.Lead-free and ROHS compliant.  Evaluation boards are available upon request.

特性 Features

• Frequency Range: DC - 2.7 GHz
• Output Power (P3dB): 178 W at 1.8 GHz
• Linear Gain: 21.8 dB typical at 1.8 GHz
• Typical PAE3dB: 64.8 % at 1.8 GHz
• Operating voltage: 65V
• Low thermal resistance package
• CW and Pulse capable
• 7.2 x 6.6 mm package

应用 Application

• Military Radar
• Commercial Radar
• Land Mobile and Military Radio Communications
• Active Antennas
• Base Stations
• Jammers